| PART |
Description |
Maker |
| MRF9045M |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc.
|
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| MRF19125 MRF19125S MRF19125SR3 |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MRF9030LSR1 MRF9030 MRF9030D MRF9030LR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MHS10N431K |
Micron Power Resistors
|
Allen
|
| N25Q256A |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| 4991A |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| N25Q032A13ESF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q128A13ESE40E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q256A13E1240E N25Q256A13EF840E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A
|
Micron Technology
|
